Semiconductor device and method of forming vertical structure

ABSTRACT

According to an exemplary embodiment, a method of forming a vertical structure with at least two barrier layers is provided. The method includes the following operations: providing a substrate; providing a vertical structure over the substrate; providing a first barrier layer over a source, a channel, and a drain of the vertical structure; and providing a second barrier layer over a gate and the drain of the vertical structure.

BACKGROUND

Vertical semiconductor devices, such as vertical gate-all-aroundtransistors, are an emerging research area in the semiconductorindustry. However, the process integration for the device is always achallenge because essentials of the device are vulnerable to oxidation.Therefore, there is a need to improve the above deficiency.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1-14, 4 a, 4 b, 11 a are sectional views illustrating an exemplarysemiconductor device in accordance with some embodiments.

FIGS. 15-24 are sectional views illustrating another exemplarysemiconductor device in accordance with some embodiments.

FIG. 25 is a flow chart for a method forming a vertical structure inaccordance with some embodiments.

FIG. 26 is a flow chart for a method forming a vertical structure inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and the secondfeatures are formed in direct contact, and may also include embodimentsin which additional features may be formed between the first and thesecond features, such that the first and the second features may not bein direct contact. In addition, the present disclosure may repeatreference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

This disclosure provides a novel vertical structure having multiplebarrier layers, which can be applied to vertical gate-all-around (VGAA)devices. The material of the barrier layers can be SiN, SiCN, or SiCON.The barrier layers isolate a source, a drain, a gate including high-Klayer and a metal gate from oxidation by other processes. Therefore, thevertical structure having the barrier layers may decrease: nanowireoxidation caused by changing critical dimension of the nanowire;source/drain oxidation; high-K dielectrics oxidation caused by changingequivalent oxide thickness (EOT); and metal gate oxidation, due toannealing processes. Additionally, the barrier layers can be used as ahard mask during contact etching processes to form self-alignedcontacts.

The vertical structure may be configured as follows: the substratematerial may be Si, SiGe, Ge, or III/V Epi (InP, GaAs, AlAs, InAs,InAlAs, InGaAs, InSb, GaSb, InAlSb, InGaSb); the nanowire material maybe Si, SiGe, Ge, or III/V Epi (InP, GaAs, AlAs, InAs, InAlAs, InGaAs,InSb, GaSb, InAlSb, InGaSb); the substrate material can be same ordifferent with the nanowire material; the high-K dielectrics may be asingle layer or multiple layers structure with HfO₂, ZrO₂, HfZrO₂,Ga₂O₃, Gd₂O₃, TaSiO₂, Al2O₃, or TiO₂; the work function metal (WFM) forPMOS vertical structures may be TiN, W, WN, Mo, or MoN; the WFM for NMOSvertical structures may be TiAl, TiAlC, or TaAlC; the metal gate (MG)material may be Al, W, Co, or Cu; the barrier layer material may be SiN,SiON, SiC, SiCN, SiCO, or SiCON; SAC metal material may be Al, W, Co, orCu; Back-end-of-line (BEOL) metal material may be Al, W, Co, or Cu.

Additionally, the drain may refer to a region that has been treated as adrain, or a region that has not been treated but to be treated as adrain. The source may refer to a region that has been treated as asource, or a region that has not been treated but to be treated as asource. The channel may refer to a region that has been treated as achannel, or a region that has not been treated but to be treated as achannel.

FIG. 1 is a sectional view illustrating an exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 1, asemiconductor device 100 is provided. In the semiconductor device 100, afirst vertical structure 110, and a second vertical structure 120 areprovided over a substrate 101. The first vertical structure 110 and thesecond vertical structure 120 may be vertical-gate-all-around deviceselectrically isolated by shallow trench isolation 102. The firstvertical structure 110 may be a PMOS, and may include an n-well 111, afirst source 112, a first channel 113, and a first drain 114. The secondvertical structure 120 may be an NMOS, and may include a p-well 121, asecond source 122, a second channel 123, and a second drain 124.Silicides 116, 126 are used to reduce contact resistance.

The first source 112 is disposed over the n-well 111. The first channel113 is disposed over the first source 112. The first drain 114 isdisposed over the first channel 113. The second source 122 is disposedover the p-well 121. The second channel 123 is disposed over the secondsource 122. The second drain 124 is disposed over the second channel123. The following procedures may be performed on the first verticalstructure 110 and the second vertical structure 120, so will only bediscussed below with respect to the first vertical structure 110.

In one embodiment, the substrate 101 includes a crystalline siliconsubstrate. In some alternative embodiments, the substrate 101 may bemade of some other suitable elemental semiconductor, such as diamond orgermanium; a suitable compound semiconductor, such as gallium arsenide,silicon carbide, indium arsenide, or indium phosphide; or a suitablealloy semiconductor, such as silicon germanium carbide, gallium arsenicphosphide, or gallium indium phosphide. Further, the substrate 101 mayinclude an epitaxial layer (epi-layer), may be strained for performanceenhancement, and/or may include a silicon-on-insulator (SOI) structure.

FIG. 2 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 2, a firstbarrier layer 202 is formed over the source 112, the channel 113, andthe drain 114 of the first vertical structure 110 to protect them fromoxidation. The first barrier layer 202 may be formed of SiN, SiON, SiC,SiCN, SiCO, or SiCON. The first barrier layer 202 may have a thicknessof, for example, about 30 to about 60 angstroms. In the embodiment, thefirst barrier layer 202 is formed in contact with the source 112, thechannel 113, and the drain 114; in some embodiment, there are otherlayers therebetween so that the first barrier layer 202 is formed not incontact with but adjacent to them.

A first interlayer dielectric 204 (e.g., an oxide layer) is formed overthe first barrier layer 202. To enhance quality of the first interlayerdielectric 204, oxidation processes may be applied to the firstinterlayer dielectric 204. In some embodiments, the enhancement isincluded in the formation of the first interlayer dielectric 204. Thesource 112, the channel 113, and the drain 114 of the first verticalstructure 110 are covered by the first barrier layer 202, so that theoxidation processes for the enhancement does not damage or oxidize thefirst vertical structure 110. A chemical mechanical polishing isperformed on the first interlayer dielectric 204 and stops on the firstbarrier layer 202. The protection that the first barrier layer 202provides is not limited to the above oxidation and can be any that islikely to oxidize the first vertical structure 110.

FIG. 3 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 3, thefirst interlayer dielectric 204 is etched back to form a bottomisolation layer 302 corresponding to the source 112 of the firstvertical structure 110 by using wet etching or plasma etching. In theembodiment, the bottom isolation layer 302 is aligned with a top surfaceof the source 112 in conjunction with the channel 113.

FIG. 4 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 4, thefirst barrier layer 202 is etched back, by using wet etching or plasmaetching, and corresponds to the source 112. In details, the firstbarrier layer 202 is aligned with the top surface of the source 112 inconjunction with the channel 113.

FIG. 4 a is a sectional view illustrating a detailed diagram of the leftportion of the exemplary semiconductor device in accordance with someembodiments. As shown in FIG. 4 a, the first interlayer dielectric 204and the first layer 202 are well-controlled to etched back by using wetetching or plasma etching. In the embodiment, the first interlayerdielectric 204 is higher than a top surface of the source 112 about 0 toabout 10 nanometers. The method will provide a device operating in anaccumulation mode.

FIG. 4 b is a sectional view illustrating another detailed diagram ofthe left portion of the exemplary semiconductor device in accordancewith some embodiments. As shown in FIG. 4 b, the first interlayerdielectric 204 and the first layer 202 are well-controlled to etchedback by using wet etching or plasma etching. In the embodiment, thefirst interlayer dielectric 204 is lower than a top surface of thesource 112 about 0 to about 10 nanometers. The method will provide adevice operating in an inversion mode.

FIG. 5 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. Continuing from FIG. 4, asshown in FIG. 5, a high-k dielectric layer 502, work function metal(WFM) layers 504, 506, and a metal gate 508 are formed over the firstvertical structure 110. The high-K dielectric material may be a singlelayer or multiple layers structure with HfO₂, ZrO₂, HfZrO₂, Ga₂O₃,Gd₂O₃, TaSiO₂, Al2O₃, or TiO₂. The work function metal (WFM) may be TiN,W, WN, Mo, MoN, TiAl, TiAlC, or TaAlC. The metal gate material may beAl, W, Co, or Cu.

FIG. 6 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 6, thehigh-k dielectric layer 502, the work function metal (WFM) layers 504,506, and the metal gate 508 are etched back to expose the drain 114.

FIG. 7 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 7, aportion of the high-k dielectric layer 502, the work function metal(WFM) layers 504, 506, and the metal gate 508 above the STI 102 betweenthe first vertical structure 110 and the second vertical structure 120are etched back, and the etch-back stops on the bottom isolation layer302. A gate 702 is formed and includes the high-k dielectric layer 502,the work function metal (WFM) layers 504, 506, and the metal gate 508.

FIG. 8 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 8, a secondbarrier layer 802 is formed over the gate 702 and the drain 114 of thefirst vertical structure 110, and the bottom isolation layer 302 so asto protect the gate 702 and the drain 114 from oxidation. In details,the second barrier layer 802 is formed in contact with a top and asidewall of the gate 702, and a top and a sidewall the drain 114 aswell.

The second barrier layer 802 may be formed of SiN, SiON, SiC, SiCN,SiCO, or SiCON. The second barrier layer 802 may have a thickness of,for example, about 30 to about 60 angstroms. In the embodiment, thesecond barrier layer 802 is formed in contact with the gate 702 and thedrain 114; in some embodiment, there are other layers therebetween sothat the second barrier layer 802 is formed not in contact with butadjacent to them.

FIG. 9 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 9, a secondinterlayer dielectric 902 (e.g., an oxide layer) is formed over thesecond barrier layer 802. In some embodiments, the enhancement isincluded in the formation of the second interlayer dielectric 902. Toenhance quality of the second interlayer dielectric 902, oxidationprocesses may be applied to the second interlayer dielectric 902. Thegate 702 and the drain 114 of the first vertical structure 110 arecovered by the second barrier layer 802 so that the oxidation processesfor the enhancement does not damage or oxidize the first verticalstructure 110. Furthermore, a chemical mechanical polishing is performedon the second interlayer dielectric 902 and stops on the second barrierlayer 802. The protection that the second barrier layer 802 provides isnot limited to the above oxidation and can be any that is likely tooxidize the first vertical structure 110.

FIG. 10 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 10, thesecond interlayer dielectric 902 and the second barrier layer 802 areetched back to expose a top of the drain 114 of the first verticalstructure 110 by using wet etching or plasma etching.

FIG. 11 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 11, a metalis deposited on the drain 114, and annealing is performed on the metalto form a silicide 1102.

FIG. 11 a is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. Continuing from FIG. 9, asshown in FIG. 11 a the second interlayer dielectric 902 and the secondbarrier layer 802 are etched back to expose not only a top of the drain114 but also a portion of a sidewall of the drain 114 by using wetetching or plasma etching. Moreover, a metal is deposited the top andthe sidewall of the drain 114, and annealing is performed on the metalto form a silicide 1102 a having a greater width than the silicide 1102in FIG. 11.

FIG. 12 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. Continuing from FIG. 11, asshown in FIG. 12, a pad 1202 is formed on the silicide 1102. A thirdinterlayer dielectric 1204 (e.g., an oxide layer) is formed over thesecond interlayer dielectric 902 and the pad 1202.

FIG. 13 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 13, anopening 1302 is formed through the first barrier layer 202, the firstinterlayer dielectric 204, the second barrier layer 802, the secondinterlayer dielectric 902, and the third interlayer dielectric 1204. Theformation of the opening 1302 may include: to etch the third interlayerdielectric 1204 and the second interlayer dielectric 902; to etch thesecond barrier layer 802; to etch the first interlayer dielectric 204;to etch the first barrier layer 202. The second barrier layers 802 canbe used a hard mask during such formation of the opening 1302 to protectthe gate 702 from unexpected damage.

FIG. 14 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 14, acontact metal 1402 is formed in the opening 1302. A chemical mechanicalpolishing is performed on the contact metal 1402 and stops on the thirdinterlayer dielectric 1204.

In the abovementioned processes, the first barrier layer 202 protectsthe source 112, the channel 113, and the drain 114 of the first verticalstructure 110 from the formation of the bottom isolation layer 302 whichmay damage or oxidize the first vertical structure 110. The secondbarrier layer 802 protects the gate 702 and the drain 114 from theformation of the second interlayer dielectric 902 which may damage oroxidize the first vertical structure 110.

The abovementioned disclosure shows one embodiment, and the followingdescription disclosure will introduce another embodiment with othertypes of barrier layers.

FIG. 15 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. Continuing from FIG. 4, asshown in FIG. 15, a high-k dielectric layer 1502, a work function metal(WFM) layers 1504, and a metal gate 1508 are formed over the firstvertical structure 110. Compared to FIG. 5, the formation does not fillthe recess between the first vertical structure 110 and the secondvertical structure 120 with the metal gate 1508 but as a thin layer inFIG. 15.

FIG. 16 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 16, aportion of the high-k dielectric layer 1502, the work function metal(WFM) layer 1504, and the metal gate 1508 above the STI 102 between thefirst vertical structure 110 and the second vertical structure 120 areetched back, and the etch-back stops on the bottom isolation layer 302.

FIG. 17 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 17, asecond barrier layer 1702 is formed over the high-k dielectric layer1502, the work function metal layer 1504, and the metal gate 1508 so asto protect them from oxidation. The second barrier layer 1702 may beformed of SiN, SiON, SiC, SiCN, SiCO, or SiCON. The second barrier layer1702 may have a thickness of, for example, about 30 to about 60angstroms. In the embodiment, the second barrier layer 1702 is formed incontact with the high-k dielectric layer 1502, the work function metallayer 1504, the metal gate 1508 and the bottom isolation layer 302; insome embodiment, there are other layers therebetween so that the secondbarrier layer 1702 is formed not in contact with but adjacent to them.

A second interlayer dielectric 1704 (e.g., an oxide layer) is formedover the second barrier layer 1702. To enhance quality of the secondinterlayer dielectric 1704, oxidation processes may be applied to thesecond interlayer dielectric 1704. In some embodiments, the enhancementis included in the formation of the second interlayer dielectric 1704.The high-k dielectric layer 1502, the work function metal layer 1504,and the metal gate 1508 are covered by the second barrier layer 1702 sothat the oxidation processes for the enhancement does not damage oroxidize the first vertical structure 110. The protection that the secondbarrier layer 1702 provides is not limited to the above oxidation andcan be any that is likely to oxidize the first vertical structure 110.

FIG. 18 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 18, achemical mechanical polishing is performed on the second interlayerdielectric 1704 and stops on the second barrier layer 1702. Moreover,the second interlayer dielectric 1704 is etched back as a middleisolation layer 1802 to be aligned with a top of the channel 113 inconjunction with the drain 114.

FIG. 19 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 19, thesecond barrier layer 1702, the high-k dielectric layer 1502, the workfunction metal layer 1504, and the metal gate 1508 are etched back todisconnect from the drain 114.

FIG. 20 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 20, a thirdbarrier layer 2002 is formed over the high-k dielectric layer 1502, thework function metal layer 1504, the metal gate 1508, and a sidewall ofthe drain 114 so as to protect them from oxidation. The third barrierlayer 2002 may be formed of SiN, SiON, SiC, SiCN, SiCO, or SiCON. Theformation of the third barrier layer 2002 may include: to conformallyform the third barrier layer 2002; and to perform dry etching on thethird barrier layer 2002 to expose the drain 114. In the embodiment, thethird barrier layer 2002 is formed in contact with the high-k dielectriclayer 1502, the work function metal layer 1504, the metal gate 1508, anda sidewall of the drain 114; in some embodiment, there are other layerstherebetween so that the third barrier layer 2002 is formed not incontact with but adjacent to them.

FIG. 21 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 21, a metalis deposited on the drain 114, and annealing is performed on the metalto form a silicide 2102.

FIG. 22 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 22, a pad2202 is formed on the silicide 2102. A third interlayer dielectric 2204(e.g., an oxide layer) is formed over the middle isolation layer 1802and the pad 2202 as a top isolation layer.

FIG. 23 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 23, anopening 2302 is formed through the first barrier layer 202, the firstinterlayer dielectric 204, the second barrier layer 1702, the secondinterlayer dielectric 1802, and the third interlayer dielectric 2204.The formation of the opening 1302 may include: to etch the thirdinterlayer dielectric 2204 and the second interlayer dielectric 1802; toetch the second barrier layer 1702; to etch the first interlayerdielectric 204; to etch the first barrier layer 202. In someembodiments, when the metal gate 1508 is closer to the opening 2302, thesecond barrier layers 1702 can be used a hard mask during such formationof the opening 2302 to protect the metal gate 1508 from unexpecteddamage.

FIG. 24 is a sectional view illustrating the exemplary semiconductordevice in accordance with some embodiments. As shown in FIG. 24, acontact metal 2402 is formed in the opening 2302. A chemical mechanicalpolishing is performed on the contact metal 2402 and stops on the thirdinterlayer dielectric 2204.

In the abovementioned processes, the first barrier layer 202 protectsthe source 112, the channel 113, and the drain 114 of the first verticalstructure 110 from the formation of the bottom isolation layer 302 whichmay damage or oxidize the first vertical structure 110. The secondbarrier layer 1702 protects the high-k dielectric layer 1502, the workfunction metal layer 1504, and the metal gate 1508 from the formation ofthe middle isolation layer 1802 which may damage or oxidize the firstvertical structure 110. The third barrier layer 2002 protects the high-kdielectric layer 1502, the work function metal layer 1504, the metalgate 1508, and the drain 114 from the formation of the top isolationlayer 2204 which may damage or oxidize the first vertical structure 110.Each of the formation of the bottom isolation layer 302, the middleisolation layer 1802, and the top isolation layer 2204 respectivelycorresponds to the source 112, the gate in contact with the channel 113,and the drain 114.

FIG. 25 is a flow chart for a method of forming a vertical structurewith at least two barrier layers. As shown in FIG. 25, a method 2500 isprovided. The method 2500 includes the following operations: providing asubstrate (2502); providing a vertical structure over the substrate(2504); providing a first barrier layer over a source, a channel, and adrain of the vertical structure (2506); and providing a second barrierlayer over a gate and the drain of the vertical structure (2508).

The method 2500 may further include forming a first interlayerdielectric over the first barrier layer corresponding to the source ofthe vertical structure. The method 2500 may further include forming thegate over the channel of the vertical structure. The method 2500 mayfurther include forming a second interlayer dielectric over the secondbarrier layer corresponding to the gate and the drain of the verticalstructure. The method 2500 may further include: performing chemicalmechanical polishing on the second interlayer dielectric and stopping onthe second barrier layer; etching the second interlayer dielectric andthe second barrier layer to expose a top of the drain; and formingsilicide on the drain.

The method 2500 may further include: forming an opening through thefirst barrier layer, the first interlayer dielectric, the second barrierlayer, and the second interlayer dielectric; and forming contact metalin the opening. The method 2500 may further include etching the secondbarrier layer to expose the drain and a top of the gate; and forming athird barrier layer as a spacer over the top of the gate and a sidewallof the drain. The operation 2508 may further include providing thesecond barrier layer in contact with a sidewall of the drain of thevertical structure. The operation 2508 may further include providing thesecond barrier layer in contact with a sidewall of the drain and a topand a sidewall of the gate of the vertical structure.

FIG. 26 is a flow chart for a method of forming a vertical structure. Asshown in FIG. 26, a method 2600 is provided. The method 2600 includesthe following operations: providing a substrate (2602); providing avertical structure over the substrate (2604); and providing a barrierlayer over the vertical structure to protect the vertical structure fromoxidation (2606).

The operation 2606 may further include providing the barrier layer overthe vertical structure to protect the vertical structure from oxidationduring formation of an oxide layer. The operation 2606 may furtherinclude providing the barrier layer over a source of the verticalstructure to protect the source during formation of the oxide layercorresponding to the source. The operation 2606 may further includeproviding the barrier layer over a gate of the vertical structure toprotect the gate during formation of the oxide layer corresponding tothe gate. The operation 2606 may further include providing the barrierlayer over a drain of the vertical structure to protect the drain duringformation of the oxide layer corresponding to the drain.

According to an exemplary embodiment, a method of forming a verticalstructure with at least two barrier layers is provided. The methodincludes the following operations: providing a substrate; providing avertical structure over the substrate; providing a first barrier layerover a source, a channel, and a drain of the vertical structure; andproviding a second barrier layer over a gate and the drain of thevertical structure.

According to an exemplary embodiment, a method of forming a verticalstructure is provided. The method includes the following operations:providing a substrate; providing a vertical structure over thesubstrate; and providing a barrier layer over the vertical structure toprotect the vertical structure from oxidation.

According to an exemplary embodiment, a semiconductor device isprovided. The device includes: a substrate; a vertical device over thesubstrate and having a source, a gate and a drain; and a barrier layerover the gate and the drain of the vertical structure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A method of forming a vertical structure with at least two barrierlayers, comprising: providing a substrate; providing a verticalstructure over the substrate; providing a first barrier layer over asource, a channel, and a drain of the vertical structure; forming afirst interlayer dielectric over the first barrier layer correspondingto the source of the vertical structure; and providing a second barrierlayer over a gate and the drain of the vertical structure.
 2. (canceled)3. The method of claim 1, further comprising forming the gate over thechannel of the vertical structure.
 4. The method of claim 3, furthercomprising forming a second interlayer dielectric over the secondbarrier layer corresponding to the gate and the drain of the verticalstructure.
 5. The method of claim 4, further comprising: performingchemical mechanical polishing on the second interlayer dielectric andstopping on the second barrier layer; etching the second interlayerdielectric and the second barrier layer to expose a top of the drain;and forming silicide on the drain.
 6. The method of claim 5, furthercomprising: forming an opening through the first barrier layer, thefirst interlayer dielectric, the second barrier layer, and the secondinterlayer dielectric; and forming contact metal in the opening.
 7. Themethod of claim 1, further comprising: etching the second barrier layerto expose the drain and a top of the gate; and forming a third barrierlayer as a spacer over the top of the gate and a sidewall of the drain.8. The method of claim 1, wherein providing the second barrier layerover the gate and the drain of the vertical structure further comprisesproviding the second barrier layer in contact with a sidewall of thedrain of the vertical structure.
 9. The method of claim 1, whereinproviding the second barrier layer over the gate and the drain of thevertical structure further comprises providing the second barrier layerin contact with a sidewall of the drain and a top and a sidewall of thegate of the vertical structure.
 10. The method of claim 1, whereinproviding the second barrier layer over the gate and the drain of thevertical structure further comprises providing the second barrier layerwith 30-60 angstroms.
 11. The method of claim 1, wherein providing thesecond barrier layer over the gate and the drain of the verticalstructure further comprises providing the second barrier layer by usingat least one of SiN, SiCN and SiOCN.
 12. A method of forming a verticalstructure, comprising: providing a substrate; providing a verticalstructure over the substrate; and providing a first barrier layer over asource of the vertical structure to protect the source during formationof a first oxide layer corresponding to the source.
 13. (canceled) 14.(canceled)
 15. The method of claim 12, further comprising providing asecond barrier layer over a gate of the vertical structure to protectthe gate during formation of a second oxide layer corresponding to thegate.
 16. The method of claim 12, further comprising providing a secondbarrier layer over a drain of the vertical structure to protect thedrain during formation of a second oxide layer corresponding to thedrain.
 17. The method of claim 12, providing the first barrier layerover the source of the vertical structure further comprises providingthe barrier layer by using at least one of SiN, SiCN and SiOCN. 18-20.(canceled)
 21. A method of forming a vertical structure with at leasttwo barrier layers, comprising: providing a substrate; providing avertical structure including a source, a channel, and a drain over thesubstrate; providing a first barrier layer over the source, the channel,and the drain; etching the first barrier layer to expose the channel andthe drain; providing a gate over the channel; and providing a secondbarrier layer over the gate and the drain.
 22. The method of claim 21,wherein providing the second barrier layer over the gate and the drainof the vertical structure further comprises providing the second barrierlayer by using at least one of SiN, SiCN and SiOCN.
 23. The method ofclaim 21, further comprising: etching the second barrier layer to exposethe drain and a top of the gate; and forming a third barrier layer as aspacer over the top of the gate and a sidewall of the drain.